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| 3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECTREPLACEMENTFORINTERSIL3N165 ABSOLUTEMAXIMUMRATINGS1@25C(unlessotherwisenoted) MaximumTemperatures The hermetically sealed TO-78 package is well suited StorageTemperature 65Cto+200C for high reliability and harsh environment applications. OperatingJunctionTemperature 55Cto+150C LeadTemperature(Soldering,10sec.) +300C (See Packaging Information). MaximumPowerDissipation ContinuousPowerDissipation(oneside) 300mW 3N165 Features: TotalDeratingabove25C 4.2mW/C MAXIMUMCURRENT Very high Input Impedance DrainCurrent 50mA Low Capacitance MAXIMUMVOLTAGES High Gain High Gate Breakdown Voltage DraintoGate orDraintoSource2 40V Low Threshold Voltage PeakGatetoSource3 125V GateGateVoltage 80V 3N165ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS IGSSR GateReverseLeakageCurrent 10 VGS=0V IGSSF GateForwardCurrent 10 VGS=40V pA TA=+125C 25 IDSS DraintoSourceLeakageCurrent 200 VDS=20V ISDS SourcetoDrainLeakageCurrent 400 VSD=20VVDB=0 ID(on) DrainCurrent"On" 5.0 30 mA VDS=15V,VGS=10V VGS(th) GatetoSourceThresholdVoltage 2.0 5.0 V VDS=15V,ID=10A 2.0 5.0 VDS=VGS,ID=10A rDS(on) DraintoSource"On"Resistance 300 VGS=20V,ID=100A gfs ForwardTransconductance 1500 3000 S VDS=15V,ID=10mA,f=1kHz The 3N165 is a dual enhancement mode P-Channel Mosfet and is ideal for space constrained applications and those requiring tight electrical matching. gos Ciss Crss Coss RE(Yfs) www..com InputCapacitance 3 pF VDS=15V,ID=10mA,f=1MHz4 ReverseTransferCapacitance 0.7 OutputCapacitance 3.0 CommonSourceForward 1200 S VDS=15V,ID=10mA,f=100MHz4 Transconductance MATCHINGCHARACTERISTICS3N165 SYMBOL LIMITS CHARACTERISTIC UNITS CONDITIONS MIN MAX Yfs1/Yfs2 ForwardTransconductanceRatio 0.90 1.0 ns VDS=15V,ID=500A,f=MHz4 VGS12 GateSourceThresholdVoltage 100 mV VDS=15V,ID=500A Differential VGS12/T GateSourceThresholdVoltage 100 V/C VDS=15V,ID=500A DifferentialChangewithTemperature TA=55Cto=+25C SWITCHINGTESTCIRCUIT SWITCHING WAVEFORM & TEST CIRCUIT Note1Absolutemaximumratingsarelimitingvaluesabovewhich3N165 serviceabilitymaybeimpaired.* Note2-PerTransistor Note3-Devicemustnotbetestedat125Vmorethanonceorlongerthan300ms. Note4-Fordesignreferenceonly,not100%tested Click To Buy OutputAdmittance 300 Device Schematic TO-78 (Bottom View) Available Packages: 3N165 in TO-72 3N165 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution *Toavoidpossibledamagetothedevicewhilewiring,testing,orinactual operation,followtheseprocedures:Toavoidthebuildupofstaticcharge,the leadsofthedevicesshouldremainshortedtogetherwithametalringexcept whenbeingtestedorused.Avoidunnecessaryhandling.Pickupdevicesbythe caseinsteadoftheleads.Donotinsertorremovedevicesfromcircuitswiththe poweron,astransientvoltagesmaycausepermanantdamagetothedevices. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. |
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